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ZnO Crystal Substrates

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    Negotiable

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  • Delivery term:

    The date of payment from buyers deliver within days

  • seat:

    Jiangsu

  • Validity to:

    Long-term effective

  • Last update:

    2018-04-21 01:39

  • Browse the number:

    375

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Company Profile

MetaLaser INC

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Contact：gd201603(Mr.)  

Email：

Telephone：

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Area：Jiangsu

Address：No.3, Hengda Road, Economic and Technological Development Zone, Nanjing, China

Website：http://www.meta-laser.com/ http://gd201603.titdyd.com/

Product Details

Description

Zinc oxide (ZnO) single crystals were grown by the hydrothermal method using a platinum inner container. The 2 inch ZnO wafers obtained from these bulk crystals possess an extremely high crystallinity and purity. The electrical resistivity is highly uniform over the entire wafer area. After annealing, the step-and-terrace structure was observed on the surface of the wafer. The etch pit density was decreased to less than 80 cm-2. These results suggest that these 2 inch ZnO wafers are suitable for wide band gap device applications. The bandgap is in the 3.4 eVrange which makes it attractive for many of the blue and violet applications in opto-electronics as well as UV devices.

Features

Excellent crystalline quality 

Excellent lattice match to nitride

Easily etched for device integration

Applications

Semiconductor circuit substrate

ZnO LED

ZnO film

Main Specification

Materials

ZnO

Orientation

[0 0 0 -1] or [1 0 -1 0] < ±0.5°

Parallel

10〞

Perpendicular

5ˊ

surface Quality

10/5

Wavefront Distortion

λ/4 @632nm

Surface Flatness

λ/8 @632nm

Clear Aperture

>95%

Chamfer

<0.1×45°

Thickness/Diameter Tolerance

±0.05 mm

Maximum dimensions

dia 50×100mm

Coatings

AR/AR@940+1030；HR@1030+HT@940+AR1030；

Material characteristics

Physical and chemicalcharacteristics

Type of Material  

single crystal  

Crystal Structure  

hexagonal, a = b=3.252 Å, c = 5.313 Å  

Molecular Weight  

81.47

Refractive Index  

Reflective Loss 

5,1% @4,0 µm; 11,2% @0.12 µm  

Density    

5.7 g/cm3  

Melting Point  

1975°C    

Thermal Conductivity    

6 W/(m·K)

Thermal Expansion  

∥a: 6.5·10-6 /°C; ∥C:3.7·10-6 / °C @20°C 

Hardness (Mohs)  

4 

Dielectric Constant  

∥C: 4.87; ⊥C: 5.45 @95 KHz -42 MHz 

Solubility in Water  

no

Standard product


Orientation

End configuration, nm

Thickness, nm

Optical transmission

[0 0 0 -1]

5×5

0.5

 no = 1.3836,
 ne = 1.3957 

     @0.405 µm 

[1 0 -1 0]

[0 0 0 -1]

1

[1 0 -1 0]

[0 0 0 -1]

8×8

0.5

[1 0 -1 0]

[0 0 0 -1]

1

[1 0 -1 0]

[0 0 0 -1]

10×10

0.5

[1 0 -1 0]

[0 0 0 -1]

1

[1 0 -1 0]

[0 0 0 -1]

15×15

0.5

[1 0 -1 0]

[0 0 0 -1]

1

[1 0 -1 0]

[0 0 0 -1]

dia 25.4

0.5

[1 0 -1 0]

[0 0 0 -1]

1

[1 0 -1 0]

[0 0 0 -1]

dia 50.8

0.5

[1 0 -1 0]

[0 0 0 -1]

1

[1 0 -1 0]



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